Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires

n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires

In this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped...

Te-doping of self-catalyzed GaAs nanowires

the investigation of the relationship between type a and type b personalities and quality of translation

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Temperature dependence of photoluminescence of an n-i-p-i GaAs superlattice

Since the concept of doping superlattice was proposed by Esak and Tsu, the electronic properties of it were intensively investigated both theoretically and experimentally. Doping superlattices are structures which contain alternatively n-type and p-type doped regions of one semiconductor material and have a number of unique properties, such as tunable electronic structures, indirect band gap in...

Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires

Nanolasers hold promise for applications including integrated photonics, on-chip optical interconnects and optical sensing. Key to the realization of current cavity designs is the use of nanomaterials combining high gain with high radiative efficiency. Until now, efforts to enhance the performance of semiconductor nanomaterials have focused on reducing the rate of non-radiative recombination th...